Semiconductor device and manufacturing method for the same

ABSTRACT

There is here disclosed a semiconductor device comprising a first base material which is provided at least one semiconductor device mounted on one main surface, a plurality of first connection portions provided on the main surface and being electrically connected to the semiconductor device, and a plurality of second connection portions provided outside a region on which the semiconductor device is mounted on the main surface, and a second base material which is disposed facing other main surface of the first base material on a side opposite to the side on which the semiconductor device is mounted, bonded to an edge of the first base material, and provided a plurality of third connection portions provided outside a region on which the first base material is mounted on and being electrically connected to at least one of the second connection portions.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is based upon and claims the benefit of priority fromprior Japanese Patent Applications No. 2004-003567, filed Jan. 9, 2004,the entire contents of which are incorporated herein by reference.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a mounting technique of a semiconductordevice, particularly to a wiring structure of a base material on which asemiconductor device is directly or indirectly mounted, and a connectionstructure between a semiconductor device and a base material or betweenthe base materials.

2. Description of the Related Art

Several techniques concerning a wiring structure of a base material(substrate) on which a semiconductor device (semiconductor chip) isdirectly or indirectly mounted have heretofore been proposed. Thesetechniques have been described, for example, in Jpn. Pat. Appln. KOKAIPublication Nos. 7-115112, 8-70024, 9-129673 and the like.

In a general semiconductor device, a semiconductor chip is directlymounted on one main surface (chip mounting surface) of a double-surfacewiring substrate on whose opposite main surfaces wirings are formed. Aplurality of chip connection wirings electrically connected to thesemiconductor chip are formed on the chip mounting surface of thesubstrate. Chip connection pads for a plurality of electrode pads formedon the semiconductor chip are formed on the respective chip connectionwirings. Each electrode pad is bonded to each chip connection pad, andthe semi-conductor chip is electrically connected to each chipconnection wiring. An external wiring (external terminal) forelectrically connecting the semiconductor chip to another substrate,electric component or the like is formed on the other main surface (chipnon-mounting surface) of the substrate.

Since a connection density of the semiconductor chip to a wiringsubstrate is high in the wiring substrate having the above-describedwiring structure, a need for miniaturization and multilayer of thewiring substrate easily arises. The wirings or the terminals need to beformed on the opposite main surfaces of the wiring substrate. Therefore,a manufacturing cost of the wiring substrate easily increases.Additionally, the manufacturing cost of the semiconductor deviceprovided with this wiring substrate easily increases. In the method ofconnecting the semiconductor chip to the wiring substrate, a largestress is easily applied onto a connection portion between thesemiconductor chip and the wiring substrate, the surface of thesemiconductor chip or the like because of a difference in coefficient ofthermal expansion between the chip and substrate. Especially, when abrittle low-k film is used in an interlayer insulating film in thesemiconductor chip, there is a high possibility that fatal defects suchas peeling of the interlayer insulating film are caused by the stressapplied onto the semiconductor chip. That is, there is a highpossibility that durability, reliability, capability, quality and thelike of the semiconductor device are deteriorated

BRIEF SUMMARY OF THE INVENTION

According to an aspect of the invention, there is provided asemiconductor device comprising: a first base material which is providedat least one semi-conductor device mounted on one main surface of thefirst base material, a plurality of first connection portions providedon the main surface of the first base material on the side on which thesemiconductor device is mounted and being electrically connected to thesemiconductor device, and a plurality of second connection portionsprovided outside a region on which the semiconductor device is mountedon the main surface of the first base material on the side on which thesemiconductor device is mounted; and a second base material which isdisposed facing the main surface of the first base material on a sideopposite to the side on which the semiconductor device is mounted,bonded to an edge of the first base material so that the first basematerial is mounted on the second base material, and provided aplurality of third connection portions provided outside a region onwhich the first base material is mounted on the main surface of thesecond base material on the side facing the first base material andbeing electrically connected to at least one of the second connectionportions.

According to another aspect of the invention, there is provided amanufacturing method for a semiconductor device, comprising: disposing afirst base material and a second base material in such a manner that thefirst and second base materials face each other, the first base materialis provided at least one semiconductor device mounted on one mainsurface of the first base material, the first base material is provideda plurality of first connection portions provided on the main surface ofthe first base material on a side on which the semiconductor device ismounted and being electrically connected to the semi-conductor device,and the first base material is provided a plurality of second connectionportions provided outside a region on which the semiconductor device ismounted on the main surface of the first base material on the side onwhich the semiconductor device is mounted, and the second base materialbeing disposed facing the main surface of the first base material on aside opposite to the side on which the semiconductor device is mounted,and the second base material including a plurality of third connectionportions provided outside a region on which the first base material ismounted on the main surface of the second base material on the sidefacing the first base material and being electrically connected to atleast one of the second connection portions, and mounting the first basematerial on the second base material, by bonding an edge of the firstbase material to the second base material.

BRIEF DESCRIPTION OF THE SEVERAL VIEWS OF THE DRAWING

FIG. 1 is a sectional view showing a semiconductor device according to afirst embodiment;

FIG. 2 is a sectional view showing the semi-conductor device accordingto a second embodiment;

FIG. 3 is a sectional view showing the semi-conductor device accordingto a third embodiment;

FIG. 4 is a sectional view showing the semi-conductor device accordingto a fourth embodiment;

FIG. 5 is a plan view showing the semiconductor device according to afifth embodiment seen from a semiconductor chip side; and

FIG. 6 is a sectional view showing the semi-conductor device accordingto a background art which is a comparative example with respect to thesemiconductor device of the first embodiment.

DETAILED DESCRIPTION OF THE INVENTION

Embodiments of the present invention will be described hereinafter withreference to the drawings.

FIRST EMBODIMENT

First, a first embodiment of the present invention will be describedwith reference to FIG. 1. FIG. 1 is a sectional view showing asemiconductor device according to the present embodiment.

The present embodiment relates to a structure of the semiconductordevice, particularly to a wiring structure of each base material onwhich a thin semiconductor device is directly or indirectly mounted anda bonding technique between the base materials. This will be describedhereinafter in detail.

As shown in FIG. 1, in a semiconductor device 1 of the presentembodiment, two base materials including a first base material 3 and asecond base material 4 are used with respect to at least onesemiconductor device (semiconductor chip) 2. The semiconductor chip 2 isformed in a thin shape whose thickness is about 0.15 mm or less. Aplurality of terminals (electrode pads) 5 for electrically connectingand mounting the semi-conductor chip 2 onto the first base material 3are provided on a device forming surface 2 a of the semiconductor chip2.

The semiconductor chip 2 is mounted on a chip mounting surface 3 a whichis one main surface of the first chip mounting substrate 3 as the firstbase material (first wiring substrate). In the present embodiment, amiddle part of the chip mounting surface 3 a is set to a chip mountingregion 6 on which the semiconductor chip 2 is mounted. A plurality offirst connection portions (chip connection pads) 7 electricallyconnected to the respective electrode pads 5 of the semiconductor chip 2are provided for the electrode pads 5. The respective electrode pads 5of the semiconductor chip 2 are connected to the respective chipconnection pads 7 of the first chip mounting substrate 3 via bondingmembers (solder bumps) 8 having conductivity. That is, the semiconductorchip 2 is flip-chip-connected to the first chip mounting substrate 3 inthe present embodiment. The semi-conductor chip 2 is mounted on thefirst chip mounting substrate 3 in a state in which the device formingsurface 2 a is directed to the chip mounting surface 3 a of the firstchip mounting substrate 3, so-called face-down state.

A plurality of second connection portions 9 for electrically connectingthe semiconductor chip 2 to the outside are provided outside the chipmounting region 6 of the chip mounting surface 3 a. Some of therespective second connection portions 9 are electrically connected tothird connection portions 10 provided on the second base material 4described later. For each second connection portion 9, a secondconnection portion 9 a to be connected to the third connection portion10 is provided on an edge 3 b of the first chip mounting substrate 3. Inthe following description, the second connection portion connected tothe third connection portion 10 will be referred to as the firstsubstrate connection pad 9 a. Among the respective second connectionportions 9, second connection portions 9 b except the first substrateconnection pads 9 a are electrically connected to external electriccomponents such as a mounting substrate and passive component (notshown). In the following description, the second connection portionsconnected to these external electric components will be referred to asthe external connection pads (external terminals) 9 b. These externalconnection pads 9 b are disposed between a middle part which is the chipmounting region 6 and the edge 3 b on which the first substrateconnection pad 9 a is disposed on the chip mounting surface 3 a.

It is to be noted that the respective chip connection pads 7, firstsubstrate connection pads 9 a, and external connection pads 9 bconstitute some of a plurality of wirings (not shown) formed inpredetermined patterns on the side of the chip mounting surface 3 a ofthe first chip mounting substrate 3. The other main surface of the firstchip mounting substrate 3 is set as a chip non-mounting surface 3 c onwhich the semiconductor chip 2 or the like is not mounted. Any wiring orterminal (pad) or the like is not formed on the chip non-mountingsurface 3 c side. Moreover, any internal wiring that extends through thefirst chip mounting substrate 3 along a thickness direction tocommunicate with the chip mounting surface 3 a or the chip non-mountingsurface 3 c is not provided. That is, the first chip mounting substrate3 is a so-called one-sided wiring substrate.

The first chip mounting substrate 3 on which the semiconductor chip 2 ismounted is mounted on a substrate mounting surface 4 a which is onemain-surface of the second base material (second wiring substrate) 4.That is, the second base material 4 is a second chip mounting substrateon which the semiconductor chip 2 is indirectly mounted via the firstchip mounting substrate 3. The second chip mounting substrate 4 isformed to be larger than the first chip mounting substrate 3. Thesubstrate mounting surface 4 a of the second chip mounting substrate 4is disposed to face the chip non-mounting surface 3 c of the first chipmounting substrate 3. The first chip mounting substrate 3 is disposed soas to be positioned on the middle part of the second chip mountingsubstrate 4. In more detail, the first chip mounting substrate 3 isdisposed in such a manner that the semiconductor chip 2 mounted on thefirst chip mounting substrate is positioned on the middle part of thesubstrate mounting surface 4 a of the second chip mounting substrate 4.

Moreover, the first chip mounting substrate 3 is mounted on the secondchip mounting substrate 4 while only the edges 3 b of the first chipmounting substrate are bonded to the substrate mounting surface 4 a byan adhesive material (adhesive resin) 11. In the present embodiment, thefirst chip mounting substrate 3 is mounted on the second chip mountingsubstrate 4 while a region of the first chip mounting substrate oppositeto the chip mounting region 6 is provided apart from the substratemounting surface 4 a. In more detail, the first chip mounting substrate3 is mounted on the second chip mounting substrate 4 while the chipnon-mounting surface 3 c of the first chip mounting substrate isentirely provided apart from the substrate mounting surface 4 a.

As described above, the first substrate connection pads 9 a for use inconnecting the first chip mounting substrate 3 to the second chipmounting substrate 4 are provided on the edges 3 b of the first chipmounting substrate 3. That is, as shown in FIG. 1, each first substrateconnection pad 9 a is provided in a position facing the adhesivematerial 11 via the first chip mounting substrate 3. As described later,the first chip mounting substrate 3 is electrically connected to thesecond chip mounting substrate 4 by a wire bonding method. By thisstructure, an adhesive material formed of a material from which ahardness for appropriately bonding each first substrate connection pad 9a to a bonding wire 12 is obtained is preferably used as the adhesivematerial 11. Moreover, as the adhesive material 11, it is preferable touse an adhesive material formed of a material from which the hardness isobtained so as to be capable of holding a hollow state between the chipnon-mounting surface 3 c of the first chip mounting substrate 3 exceptthe edges 3 b and the substrate mounting surface 4 a of the second chipmounting substrate 4 even after bonding the first chip-mountingsubstrate 3 to the second chip mounting substrate 4.

A plurality of third connection portions 10 for electrically connectingthe second chip mounting substrate 4 to the first chip mountingsubstrate 3 are provided outside a substrate mounting region 13 as aregion on which the first chip mounting substrate 3 is mounted on thesubstrate mounting surface 4 a. The respective second connectionportions 10 are provided on edges 4 b of the second chip mountingsubstrate 4. In the following description, these third connectionportions will be referred to as the second substrate connection pads 10.The respective second substrate connection pads 10 are electricallyconnected to the first substrate connection pads 9 a provided on thefirst chip mounting substrate 3 via the bonding wires 12. The first andsecond substrate connection pads 9 a, 10 and bonding wires 12 are coatedand sealed with sealing members (sealing resins) 14.

It is to be noted that the second substrate connection pads 10 form someof the plurality of wirings (not shown) formed in predetermined patternson the substrate mounting surface 4 a side of the second chip mountingsubstrate 4. In the present embodiment, the other main surface of thesecond chip mounting substrate 4 is set as a substrate non-mountingsurface (chip non-mounting surface) on which the first chip mountingsubstrate 3, semiconductor chip 2 or the like is not mounted. Any wiringor terminal (pad) or the like is not formed on the substratenon-mounting surface side. Moreover, any internal wiring that extendsthrough the second chip mounting substrate 4 along the thicknessdirection to communicate with the substrate mounting surface 4 a and thesubstrate non-mounting surface is not provided. That is, the second chipmounting substrate 4 of the present embodiment is also one-sided wiringsubstrate similar to the first chip mounting substrate 3.

As described in the background art, in a conventional generalsemiconductor device 101, as shown in FIG. 6, a semiconductor chip 105is directly mounted on a double-surface wiring substrate 104 on whosefront/back (upper/lower) opposite main surfaces a plurality ofconnection pads 102, 103 are formed. The semiconductor chip 105 ismounted on the wiring substrate 104 while a plurality of electrode pads106 are bonded to the respective chip connection pads 102 formed on onemain surface of the double-surface wiring substrate 104. The respectiveelectrode pads 106 are bonded to the chip connection pads 102 via bumps107. Solder balls 108 are provided on the surfaces of the externalconnection pads 103 formed on the other main surface of the wiringsubstrate 104. The semiconductor chips 102 are electrically connected toexternal electric components of the mounting substrate (not shown) viathe external connection pads 103, solder balls 108 and the like.

However, in the semiconductor device having a structure like thesemiconductor device 101, a need for miniaturization and multilayer ofthe double-surface wiring substrate 104 easily arises. Therefore,manufacturing cost of the wiring substrate 104 easily increases.Additionally, the manufacturing cost of the semiconductor device 101including the wiring substrate 104 easily increases. In theabove-described method of connecting the semiconductor chip 105 to thewiring substrate 104, a large stress is easily applied to the connectionportion between the semiconductor chip 105 and the wiring substrate 104,the surface of the semiconductor chip 105 and the like by a differencein a coefficient of thermal expansion between the chip and substrate.Especially, when a brittle low-k film is used in an interlayerinsulating film (not shown) in the semiconductor chip 105, there is ahigh possibility that fatal defects such as peeling of the interlayerinsulating film are caused by the stress applied to the semiconductorchip 105. That is, there is a high possibility that durability,reliability, capability, quality and the like of the semiconductordevice 101 are deteriorated.

On the contrary, in the semiconductor device 1 of the presentembodiment, since the one-sided wiring substrate is used in the chipmounting substrate 3, the cost is low and the manufacturing isfacilitated as compared with the use of the double-surface wiringsubstrate.

Moreover, it is possible to also use test pads for testing whether ornot the semiconductor chip 2 is satisfactory in the external connectionpads 9 b which are the external terminals for mounting provided on thefirst chip mounting substrate 3. A quality test of the semiconductorchip 2 is conducted, for example, in a state in which the semiconductorchip 2 is mounted on the first chip mounting substrate 3. As a result ofthe test, when the semiconductor chip 2 is judged to be defective, theintegrated semiconductor chip 2 and first chip mounting substrate 3 areregarded as one set of defective products. Moreover, it is decided notto mount the semiconductor chip 2 and first chip mounting substrate 3regarded as the defective products onto the second chip mountingsubstrate 4. As a result of the test, when the semiconductor chip 2 isjudged to be satisfactory, the integrated semiconductor chip 2 and firstchip mounting substrate 3 are regarded as one set of satisfactoryproducts. Moreover, the semiconductor chip 2 and first chip mountingsubstrate 3 regarded as the satisfactory products are mounted on thesecond chip mounting substrate 4.

After selecting the satisfactory semiconductor chip 2 from a largenumber of semiconductor chips 2 beforehand, only the semiconductor chip2 and the first chip mounting substrate 3 on which the satisfactorysemiconductor chip 2 is mounted are mounted on the second chip mountingsubstrate 4. Accordingly, a quality test of the semiconductor chip 2,and a process of mounting the semiconductor chip 2 and first chipmounting substrate 3 onto the second chip mounting substrate 4 canefficiently be performed. When the satisfactory semiconductor chip 2 ismounted on the first chip mounting substrate 3, a possibility can almostbe eliminated that the integrated semiconductor chip 2 and first chipmounting substrate 3 are regarded as the defective products together. Asa result, manufacturing efficiency of the whole semiconductor device 1can be enhanced, and a high yield can be obtained in the wholesemiconductor device 1. Additionally, the manufacturing cost of thesemiconductor device 1 is reduced, and an inexpensive semiconductordevice 1 can be provided.

Moreover, the respective external connection pads 9 b are fanned out anddisposed on the outer peripheral portion of the semiconductor chip 2,and do not face the second chip mounting substrate 4. Therefore,electric contact is also facilitated in performing a chip selectiontest.

Furthermore, since the semiconductor chip 2 is flip-chip-connected tothe first chip mounting substrate 3, a planar (two-dimensional) spacefor drawing around wires as required in the wire bonding method isunnecessary. This can miniaturize the first chip mounting substrate 3.Additionally, the second chip mounting substrate 4 can be miniaturized.A height (solid space, three-dimensional space) for drawing around thewire is also unnecessary. Therefore, when the semiconductor chip 2 isthinned and miniaturized, it is also easy to store the semi-conductorchip 2 in a space (gap) from a mounting substrate (not shown) connectedto the first chip mounting substrate 3 via the external connection pads9 b. As a result, the whole semiconductor device 1 can be formed to becompact, and the space can be saved. Furthermore, a wiring distancebetween the semi-conductor chip 2 and each external connection pad 9 bshortens, and a loop inductance between the semi-conductor chip 2 andeach external connection pad 9 b decreases. Accordingly, a high-rateoperation of the semiconductor device 1 is possible.

Moreover, because the first substrate connection pads 9 a provided onthe first chip mounting substrate 3 are coupled with each secondsubstrate connection pads 10 provided on the second chip mountingsubstrate 4 by the wire bonding method, pitches of the first substrateconnection pads 9 a can largely be reduced as compared with pitches ofvia plugs which have heretofore been provided on the chip mountingsubstrate. As a result, a size of the first chip mounting substrate 3can be reduced. The first substrate connection pads 9 a are provided onthe chip mounting surface 3 a of the first chip mounting substrate 3 inthe same manner as in the chip connection pads 7 and external connectionpads 9 b. That is, the first chip mounting substrate 3 is the one-sidedwiring substrate. Therefore, it is not necessary to provide the viaplugs (through plugs) extending through the first chip mountingsubstrate 3 along the thickness direction. Furthermore, since the secondsubstrate connection pads 10 are disposed on the edges 4 b of the secondchip mounting substrate 4, a design rule of the second chip mountingsubstrate 4 can be relaxed. Accordingly, the semiconductor device 1 canbe reduced in size and cost.

Furthermore, the first chip mounting substrate 3 is bonded and mountedonto the second chip mounting substrate 4 by the adhesive material(resin) 11 having high rigidity on the opposite side (backside) of thefirst substrate connection pads 9 a provided on the edges 3 b.Accordingly, a connection yield can be enhanced in wire-bonding thefirst substrate connection pads 9 a to the second substrate connectionpads 10.

Additionally, the hollow state is obtained between the portion of thefirst chip mounting substrate 3 except the edges 3 b and the second chipmounting substrate 4, and the semiconductor chip 2 is not rigidly fixedto the second chip mounting substrate 4. This can relax various stressessuch as a thermal stress applied to the semiconductor chip 2, and canprevent various stresses from being easily concentrated on thesemiconductor chip 2. The function and effect can further be enhanced,when the first chip mounting substrate 3 is thinned and the first chipmounting substrate 3 is formed of a material high in softness(flexibility) or a material that is not easily thermally expandable.Furthermore, if the so-called low-k film is used in the interlayerinsulating film in the semiconductor chip 2 (not shown), theabove-described function and effect are remarkably high.

Moreover, since the thin semiconductor chip 2 having a thickness ofabout 0.15 mm or less is used, the softness (flexibility) of thesemiconductor chip 2 itself is high. Therefore, the semiconductor chip 2is easily deformed, twisted, and warped. Accordingly, for example, astress generated between the semiconductor chip 2 and the first chipmounting substrate 3 can be relaxed by the warp or the like of thesemiconductor chip 2 itself. That is, the semiconductor chip 2 easilyfollows the stress applied thereto, and is resistant to the stress.Therefore, when the first chip mounting substrate 3 and second chipmounting substrate 4 are formed of film or tape-shaped low-stressmaterials, the whole semiconductor device 1 can be prepared as a film ortape-shaped low-stress semiconductor device. As a result, application,applied place, applied environment or the like of the semiconductordevice 1 can largely be enlarged.

Furthermore, the first substrate connection pads 9 a are disposed on theedges 3 b of the first chip mounting substrate 3. Accordingly, thebonding wires 12 for connecting the first substrate connection pads 9 ato the second substrate connection pads 10 can be collected on the edges3 b of the first chip mounting substrate 3. As a result, it is easy toseal the first substrate connection pads 9 a, second substrateconnection pads 10, and bonding wires 12. Since the first substrateconnection pads 9 a are disposed on the edges 3 b of the first chipmounting substrate 3, a design rule of the first chip mounting substrate3 can be relaxed. Accordingly, a degree of freedom in arrangement of thefirst substrate connection pads 9 a can be enhanced, and the number offirst substrate connection pads 9 a can also be increased.

Moreover, the second substrate connection pads 10 are disposed on anouter peripheral portion of the substrate mounting region 13 of thesecond chip mounting substrate 4. Accordingly, the first substrateconnection pads 9 a can be electrically connected to the secondsubstrate connection pads 10 via the bonding wires 12 without providingany through hole in the first chip mounting substrate 3. As a result, ahole processing cost into the first chip mounting substrate 3 can besaved. Moreover, it is possible to eliminate a restriction on a degreeof freedom in the wiring of the first chip mounting substrate 3 by holeformation. Since the second substrate connection pads 10 are disposed onthe edges 4 b of the second chip mounting substrate 4, the design ruleof the second chip mounting substrate 4 can be relaxed. Accordingly, thedegree of freedom in the arrangement of the second substrate connectionpads 10 can be enhanced, and further the number of second substrateconnection pads 10 can also be increased.

Furthermore, the semiconductor chip 2 is provided so as to be positionedin the middle part of the semiconductor device 1, that is, a symmetrycenter. Accordingly, even when the stress acts on the semi-conductordevice 1 from the outside, the stress can be uniformly scattered,escaped, or absorbed in the whole semiconductor device 1. As a result,it is almost possible to eliminate a possibility that the stressdeviates and is concentrated on the semiconductor chip 2. As a result,the durability, reliability, capability, quality and the like of thesemiconductor chip 2 and further the whole semiconductor device 1 can beenhanced.

As described above, in accordance with the first embodiment, thesemiconductor chip 2, chip connection pads 7, first substrate connectionpads 9 a, and external connection pads 9 b are provided on the chipmounting surface 3 a side of the first chip mounting substrate 3.Accordingly, since the one-sided wiring substrate is usable in the firstchip mounting substrate 3, the manufacturing cost can be reduced ascompared with the use of the double-surface wiring substrate. Since theportion between the first chip mounting substrate 3 on the opposite sideof the chip mounting region 6 and the second chip mounting substrate 4is hollow, the first chip mounting substrate 3 and semiconductor chip 2are easily bent, and the stress is easily relaxed. Accordingly, it ispossible to reduce the film peeling in the semi-conductor chip 2 by thestress after mounting the semiconductor chip 2 and first chip mountingsubstrate 3 on the second chip mounting substrate 4.

That is, in accordance with the semiconductor device 1 of the presentembodiment, the wiring structures of the first and second base materials3, 4 on which the semiconductor chip 2 is directly or indirectlymounted, and the bonding method between the base materials 3, 4 areimproved, therefore the durability, reliability, capability, quality,and the like are enhanced, and further the device can be easilymanufactured at a low cost.

SECOND EMBODIMENT

Next, a second embodiment of the present invention will be describedwith reference to FIG. 2. FIG. 2 is a sectional view showing thesemiconductor device according to the present embodiment. It is to benoted that the same part as that of the first embodiment is denoted withthe same reference numerals, and detailed description thereof isomitted.

The present embodiment is different from the first embodiment in thatthe semiconductor chip is connected to and mounted onto the first chipmounting substrate by the wire bonding method.

As shown in FIG. 2, in a semiconductor device 21 of the presentembodiment, the semiconductor chip 2 is mounted on the first chipmounting substrate 3 while the device forming surface 2 a is directed onthe side opposite to the chip mounting surface 3 a of the first chipmounting substrate 3. The semiconductor chip 2 is bonded to the chipmounting region 6 of the chip mounting surface 3 a by an adhesivematerial 22 for mounting chips. The chip connection pads 7 are disposedbetween the chip mounting region 6 and the region on which the externalconnection pads 9 b are provided. The electrode pads 5 of thesemiconductor chip 2 are electrically connected to the chip connectionpads 7 by a plurality of bonding wires 23 for chip connection. In thismanner, in the present embodiment, the semiconductor chip 2 is connectedto the first chip mounting substrate 3 by the wire bonding method. Thesemiconductor chip 2 is mounted on the first chip mounting substrate 3while the device forming surface 2 a is directed not to face the chipmounting surface 3 a of the first chip mounting substrate 3 in aso-called face-up state.

As described above in accordance with the second embodiment, an effectsimilar to that of the first embodiment can be obtained. Since thesemiconductor chip 2 is mounted on the first chip mounting substrate 3by the wire bonding method, the pitch between the chip connection pads 7can be enlarged as compared with the first embodiment. This can relaxthe design rule of the first chip mounting substrate 3. Additionally,the manufacturing cost of the semiconductor device 21 can further bereduced.

THIRD EMBODIMENT

Next, a third embodiment of the present invention will be described withreference to FIG. 3. FIG. 3 is a plan view showing the semiconductordevice of the present embodiment as seen from the semiconductor chipside. It is to be noted that the same part as that of the firstembodiment is denoted with the same reference numerals, and the detaileddescription thereof is omitted.

The present embodiment is different from the first embodiment in that aconductive layer is further provided on each external connection pad.

As shown in FIG. 3, a conductive layer 32 comprising at least one layeris provided on the surface of the external connection pad 9 b in asemiconductor device 31 of the present embodiment. At least a surfacelayer portion of each conductive layer 32 is formed of a metal which ishigh in conductivity and is not easily deteriorated, such as solder andgold (Au).

As described above, in accordance with the third embodiment, the effectsimilar to that of each of the first and second embodiments can beobtained. The conductive layer (conductive film, metal film) 32 at leastwhose surface layer portion is formed of the solder, gold (Au) or thelike is provided on the surface of each external connection pad 9 b.Accordingly, the semiconductor device 31 can be mounted as a land gridarray package (LGAP) on the mounting substrate or the like (not shown).

FOURTH EMBODIMENT

Next, a fourth embodiment of the present invention will be describedwith reference to FIG. 4. FIG. 4 is a sectional view showing thesemiconductor device according to the present embodiment. It is to benoted that the same part as that of the first embodiment is denoted withthe same reference numerals, and the detailed description thereof isomitted.

The present embodiment is different from the first embodiment in thenumber and mounting position of the semiconductor device to be mountedon the second chip mounting substrate, the connection state between thefirst and second chip mounting substrates, and the constitution of eachexternal connection pad.

As shown in FIG. 4, in a semiconductor device 41 of the presentembodiment, a resin adhesive material 43 is provided between the firstchip mounting substrate 3 and a second chip mounting substrate 42. Inmore detail, the adhesive material 43 is provided between the regioncorresponding to the side (backside) of the chip non-mounting surface 3c of the first chip mounting substrate 3 opposite to chip mountingregion 6 and a substrate mounting surface 42 a of the second chipmounting substrate 42. The adhesive material 43 is formed of a resinhaving an elasticity of about 3.2 MPa or less, such as elastomer. Thatis, in the present embodiment, for the first chip mounting substrate 3,the edges 3 b are bonded to the second chip mounting substrate 42 viathe hard adhesive material 11, and the middle part is bonded via thesoft adhesive material 43. The region facing the first chip mountingsubstrate 3 except the middle part and edges 3 b is set to a hollowstate between the first chip mounting substrate 3 and the second chipmounting substrate 42 in the same manner as in the first embodiment.

Separately from the semiconductor chip 2 directly mounted on the firstchip mounting substrate 3, at least one semiconductor chip (electriccomponent) 44 is directly mounted on the main surface of the second chipmounting substrate 42 on the opposite side of the substrate mountingsurface 42 a. To distinguish the semiconductor chip 44 from thesemiconductor chip 2 directly mounted on the first chip mountingsubstrate 3, the semiconductor chip 2 directly mounted on the first chipmounting substrate 3 will be referred to as the first semiconductor chip2, and the semiconductor chip 44 directly mounted on the second chipmounting substrate 42 will be referred to the second semi-conductor chip44. In the following description, the chip mounting surface 3 a of thefirst chip mounting substrate 3 will be referred to as the first chipmounting surface 3 a, and the main surface of the second chip mountingsubstrate 42 on which the second semi-conductor chip 44 is mounted willbe referred to as a second chip mounting surface 42 c. In the presentembodiment, two second semiconductor chips 44 are mounted on the secondchip mounting surface 42 c of the second chip mounting substrate 42.

Moreover, a plurality of chip connection pads 45 electrically connectedto the second semiconductor chips 44 are provided as fourth connectionportions on the second chip mounting surface 42 c of the second chipmounting substrate 42. To distinguish the chip connection pads 45 fromthe chip connection pads 7 provided on the first chip mounting substrate3, the chip connection pads 7 of the first chip mounting substrate 3will be referred to as the first chip connection pads 7, and the chipconnection pads 45 of the second chip mounting substrate 42 will bereferred to as the second chip connection pads 45. The second chipconnection pads 45 are provided on the second chip mounting surface 42 cin accordance with the position on which each second semiconductor chip44 is mounted, and the positions and number of a plurality of electrodepads 46 provided on a device forming surface 44 a of each secondsemiconductor chip 44. In more detail, the second chip connection pads45 are provided outside a region of the second chip mounting surface 42c on the opposite side (backside) of a region of the substrate mountingsurface 42 a on which the adhesive material 43 is provided. In otherwords, the second chip connection pads 45 are provided outside a regionof the second chip mounting surface 42 c facing the chip mounting region6 of the first chip mounting substrate 3.

Therefore, the second semiconductor chips 44 are mounted on the secondchip mounting substrate 42 in positions which do not overlap thesemiconductor chip 2 and adhesive material 43 in a lamination directionof the first chip mounting substrate 3 and second chip mountingsubstrate 42. The electrode pads 46 of each second semiconductor chip 44are bonded to the second chip connection pads 45 of the second chipmounting substrate 42 via bonding members (solder bumps) 47 havingconductivity. That is, each second semiconductor chip 44 isflip-chip-connected to the second chip connection pads 45 and mounted onthe second chip mounting surface 42 c of the second chip mountingsubstrate 42 in the position which does not over lap with thesemiconductor chip 2 and adhesive material 43 in the thickness directionof the semi-conductor device 41. To distinguish the region of the secondchip mounting surface 42 c on which each second semiconductor chip 44 ismounted and the chip mounting region 6 of the first chip mountingsubstrate 3, the chip mounting region 6 of the first chip mountingsubstrate 3 will be referred to as the first chip mounting region 6, andthe region of the second chip mounting substrate 42 on which the secondsemiconductor chip 44 is mounted will be referred to as a second chipmounting region 48.

It is to be noted that the second chip connection pads 45 form some of aplurality of wirings (not shown) formed in predetermined patterns on thesecond chip mounting surface 42 c side of the second chip mountingsubstrate 42. Although not shown, the internal wirings (through wirings)which extend through the second chip mounting substrate along thethickness direction to communicate with the substrate mounting surface42 a and the second chip mounting surface 42 c, such as through plugsand via plugs, are provided in the second chip mounting substrate 42.Accordingly, for example, some of the second chip connection pads 45provided on the second chip mounting surface 42 c of the second chipmounting substrate 42 are electrically connected to some of the secondsubstrate connection pads 10 provided on edges 42 b of the substratemounting surface 42 a via predetermined path. That is, the secondsemiconductor chips 44 are electrically connected to the outside of thesemiconductor device 41 via the external connection pads 9 b provided onthe chip mounting surface 3 a of the first chip mounting substrate 3. Inthis manner, the second chip mounting substrate 42 of the presentembodiment is the double-surface wiring substrate different from thefirst chip mounting substrate 3 and the second chip mounting substrate 4of the first embodiment.

Furthermore, each one solder ball 49 is provided on each externalconnection pad 9 b.

As described above, in accordance with the fourth embodiment, the effectsimilar to that of the first to third embodiments can be obtained. Thesecond chip connection pads 45 are provided on the second chip mountingsurface 42 c of the second chip mounting substrate 4, and the secondchip mounting substrate 42 is the double-surface wiring substrate.Accordingly, it is possible to effectively use the space on the secondchip mounting surface 42 c side of the second chip mounting substrate42. For example, as described above, the second semiconductor chips 44can be mounted on the second chip mounting surface 42 c to enhance amounting density of the semiconductor device 41 of the presentembodiment. It is to be noted that, needless to say, in addition to thesecond semiconductor chip 44, various electric components such as apassive component, MEMS component, and optical component may also belaid on each second chip connection pad 45. Even in this case, needlessto say, high-density mounting is possible.

Moreover, the adhesive material 43 which has an elasticity of about 3.2MPa or less and which is softer than the adhesive material 11 isprovided between the region of the first chip mounting substrate 3 onthe opposite side of the chip mounting region 6 and the second chipmounting substrate 42. Accordingly, an adhesion of the first chipmounting substrate 3 to the second chip mounting substrate 42 isenhanced, whereas the softness (ease of deformation) of the first chipmounting substrate 3 and first semiconductor chip 2 can be held in thesame manner as in the first embodiment. That is, the durability,reliability, capability, quality, and the like of the semiconductordevice 41 are enhanced.

Furthermore, each one solder ball 49 is provided on the surface of eachexternal connection pad 9 b. Accordingly, the semiconductor device 41 ismounted as the ball grid array package (BGAP) on the mounting substrateor the like (not shown).

Furthermore, the second semiconductor chips 44 are mounted on the secondchip mounting regions 48 which do not overlap with the firstsemiconductor chip 2 and adhesive material 43 in the thickness directionof the semiconductor device 41. Accordingly, the mounting density of thesemiconductor device 41 can be enhanced without sacrificing the stressrelaxing capabilities of the first semiconductor chip 2 and first chipmounting substrate 3.

When each of the second chip connection pads 45 is provided on thesecond chip mounting surface 42 c of the second chip mounting substrate42, the external device other than the first semiconductor chip 2 can bemounted on the second chip mounting substrate 42. That is, when thesecond chip mounting substrate 42 is constituted as the double-surfacewiring substrate, the mounting density of the semiconductor device 41can be enhanced. Accordingly, for example, a chip mixed/loaded typesemiconductor device can be easily manufactured. Since the soft adhesivematerial 43 is provided between the region of the first chip mountingsubstrate 3 on the opposite side of the chip mounting region 6 and thesecond chip mounting substrate 42, the stress relaxing capability can beheld in the same manner as in the first embodiment. It is also possibleto reduce the film peeling or the like in the first semiconductor chip 2by the stress after mounting the first semiconductor chip 2 and firstchip mounting substrate 3 on the second chip mounting substrate 42.

FIFTH EMBODIMENT

Next, a fifth embodiment of the present invention will be described withreference to FIG. 5. FIG. 5 is a plan view showing the semiconductordevice according to the present embodiment seen from the semiconductorchip side. It is to be noted that the same part as that of the firstembodiment is denoted with the same reference numerals, and the detaileddescription thereof is omitted.

The present embodiment is different from the first embodiment in thatthe first and second substrate connection pads are disposed in outermostperipheral parts of the first and second chip mounting substrates.

As shown in FIG. 5, in a semiconductor device 51 of the presentembodiment, the first substrate connection pads 9 a are disposed on theoutermost peripheral parts of the chip mounting surface 3 a of the firstchip mounting substrate 3. Moreover, the second substrate connectionpads 10 are disposed on the outermost peripheral parts of the substratemounting surface 4 a of the second chip mounting substrate 4.

As described above, in accordance with the fifth embodiment, the effectsimilar to that of the first to third embodiments can be obtained. Sincethe first substrate connection pads 9 a are disposed on the outermostperipheral parts of the chip mounting surface 3 a of the first chipmounting substrate 3, and the second substrate connection pads 10 aredisposed on the outermost peripheral parts of the substrate mountingsurface 4 a of the second chip mounting substrate 4, the pad pitchesbetween the first substrate connection pads 9 a and the second substrateconnection pads 10 can be largely increased. This largely relaxes thedesign rule of the first and second chip mounting substrates 3, 4, andthe degree of freedom of the wiring design can be largely enhanced.Accordingly, the degree of freedom in arranging the first and secondsubstrate connection pads 9 a, 10 can be largely enhanced, and furtherthe numbers of the substrate connection pads 9 a, 10 can also be largelyincreased. That is, in the semiconductor device 51 of the presentembodiment, as compared with the semiconductor devices 1, 21, 31, 41, 51of the first to fourth embodiments, the degrees of freedom in the wiringdesign, the arrangement of the first and second substrate connectionpads 9 a, 10, and set ranges of the numbers of the substrate connectionpads 9 a, 10 are largely enhanced.

It is to be noted that the semiconductor device and manufacturing methodof the present invention are not limited to the first to fifthembodiments. A part of the constitution or the manufacturing process ofthe present invention can be changed to various settings, or varioussettings may be appropriately combined and carried out without departingfrom the scope of the present invention.

For example, in the semiconductor device 41 of the fourth embodiment,the second semiconductor chips 44 may also be mounted on the second chipmounting substrate 42 by the wire bonding method. Alternatively, withrespect to a plurality of semiconductor devices 41, the second chipconnection pads 45 are provided for the respective solder balls 49(external connection pads 9 b). Moreover, the second chip connectionpads 45 of the certain semiconductor device 41 are bonded to the solderballs 49 of the other semiconductor device 41. In this manner, the othersemiconductor devices 41 are mounted on the second chip mounting surface42 c of the second chip mounting substrate 4 of the semiconductor device41. Accordingly, a chip lamination type semiconductor device (multi chippackage, multi chip module) comprising a plurality of semiconductordevices 41 may also be manufactured.

Moreover, in the semiconductor device 41 of the fourth embodiment, theadhesive material 43 formed of the resin having an elasticity of about3.2 MPa or less does not necessarily have to be provided between thefirst chip mounting substrate 3 and the second chip mounting substrate42. In the same manner as in the semiconductor devices 1, 21, 31 of thefirst to third embodiments, the portion between the first chip mountingsubstrate 3 and the second chip mounting substrate 42 except theportions facing the edges 3 b of the first chip mounting substrate 3 maybe set to the hollow state. In the semiconductor devices 1, 21, 31 ofthe first to third embodiments, the adhesive material 43 formed of theresin with about 3.2 MPa or less may also be provided between the firstchip mounting substrate 3 and the second chip mounting substrate 42.

Moreover, the conductive layers 32 are provided so as to cover only theend surfaces of the external connection pads 9 b in the semiconductordevice 31 of the third embodiment, but the present invention is notlimited to this. The conductive layer 32 may also be provided so as tocover the whole surface of each external connection pad 9 b. In thiscase, the durability of each external connection pad 9 b can beenhanced, and further the ease of connection can be enhanced.

Furthermore, the semiconductor chip 2 is formed to be thin in the firstto fifth embodiments, but additionally the first chip mounting substrate3 and second chip mounting substrates 4, 42 may also be formed as aflexible base material having a thin shape and softness (flexibility).For example, the first chip mounting substrate 3 and second chipmounting substrates 4, 42 may also be formed in a tape or film shapeusing glass epoxy, polyimide, BT resin, PCB or the like. Accordingly,the stress relaxing capabilities of not only the first semiconductorchip 2 and second semiconductor chip 44 but also the whole semiconductordevices 1, 21, 31, 41, 51 can be remarkably enhanced. As a result, thedurability, reliability, capability, quality, and the like of therespective semiconductor devices 1, 21, 31, 41, 51 can be remarkablyenhanced. Moreover, the lightening, compacting, and space saving of thesemiconductor devices 1, 21, 31, 41, 51 can be remarkably enhanced. As aresult, versatility of the semiconductor device 1 can be remarkablyenhanced.

Furthermore, when the semiconductor devices 1, 21, 31, 41, 51 are sealedby the sealing resin, the sealing resin may be provided so as to havesymmetry with respect to the center of each of the semiconductor devices1, 21, 31, 41, 51. That is, the sealing resin may be provided in such amanner that at least the first semiconductor chip 2 has the symmetrycenter. Accordingly, even when the stress acts on each of thesemiconductor devices 1, 21, 31, 41, 51 after packaged by the sealingresin, the stress can be uniformly scattered, escaped, or absorbed inthe whole package. As a result, it is almost possible to remove thepossibility that the stress deviates and is concentrated on the specificplace of each of the semiconductor devices 1, 21, 31, 41, 51, such asthe first semi-conductor chip 2. As a result, the durability,reliability, capability, quality, and the like of the semiconductordevices 1, 21, 31, 41, 51 can be remarkably enhanced. This also appliesto the adhesive materials 11, 43.

Additional advantages and modifications will readily occur to thoseskilled in the art. Therefore, the invention in its broader aspects isnot limited to the specific details and representative embodiments shownand described herein. Accordingly, various modifications may be madewithout departing from the spirit or scope of the general inventionconcept as defined by the appended claims and their equivalents.

1. A semiconductor device comprising: a first base material which isprovided at least one semiconductor device mounted on one main surfaceof the first base material, a plurality of first connection portionsprovided on the main surface of the first base material on the side onwhich the semiconductor device is mounted and being electricallyconnected to the semiconductor device, and a plurality of secondconnection portions provided outside a region on which the semiconductordevice is mounted on the main surface of the first base material on theside on which the semiconductor device is mounted; and a second basematerial which is disposed facing the main surface of the first basematerial on a side opposite to the side on which the semiconductordevice is mounted, bonded to an edge of the first base material so thatthe first base material is mounted on the second base material, andprovided a plurality of third connection portions provided outside aregion on which the first base material is mounted on the main surfaceof the second base material on the side facing the first base materialand being electrically connected to at least one of the secondconnection portions.
 2. The device according to claim 1, wherein: theregion of the first base material on the opposite side of the region onwhich the semiconductor device is mounted is provided apart from thesecond base material.
 3. The device according to claim 1, wherein: theregion of the first base material on the opposite side of the region onwhich the semiconductor device is mounted, is bonded to the second basematerial by an adhesive material having an elasticity of 3.2 MPa orless.
 4. The device according to claim 1, wherein: the semiconductordevice has a thickness of 0.15 mm or less.
 5. The device according toclaim 1, wherein: the second connection portion connected to the thirdconnection portion among the respective second connection portions isprovided outside the other second connection portions.
 6. The deviceaccording to claim 1, further comprising: a conductive layer comprisingat least one layer or a solder ball, provided on the second connectionportion other than the second connection portion connected to the thirdconnection portion among the respective second connection portions. 7.The device according to claim 1, wherein: the semiconductor device isflip-chip or wire-bonding connected to the first connection portions andmounted on the first base material.
 8. The device according to claim 1,wherein: the first base material is a one-sided wiring substrate whichis provided the respective first connection portions and the respectivesecond connection portions only on the side of the first base materialon which the semiconductor device is mounted.
 9. The device according toclaim 1, wherein: the first base material is bonded to the second basematerial by an adhesive material, which comprising a material from whichhardness is obtained so as to be capable of electrically andappropriately connecting the respective second connection portions tothe third connection portions by a wire bonding method and holding thefirst base material apart from the second base material, and provided onan edge of the main surface of the first base material on a sideopposite to the side on which the semiconductor device is mounted. 10.The device according to claim 1, further comprising: at least oneelectric component other than the semiconductor device, mounted on themain surface of the second base material on a side opposite to the sideon which the first base material is mounted.
 11. A manufacturing methodfor a semiconductor device, comprising: disposing a first base materialand a second base material in such a manner that the first and secondbase materials face each other, the first base material is provided atleast one semiconductor device mounted on one main surface of the firstbase material, the first base material is provided a plurality of firstconnection portions provided on the main surface of the first basematerial on a side on which the semi-conductor device is mounted andbeing electrically connected to the semiconductor device, and the firstbase material is provided a plurality of second connection portionsprovided outside a region on which the semiconductor device is mountedon the main surface of the first base material on the side on which thesemiconductor device is mounted, and the second base material beingdisposed facing the main surface of the first base material on a sideopposite to the side on which the semiconductor device is mounted, andthe second base material including a plurality of third connectionportions provided outside a region on which the first base material ismounted on the main surface of the second base material on the sidefacing the first base material and being electrically connected to atleast one of the second connection portions, and mounting the first basematerial on the second base material, by bonding an edge of the firstbase material to the second base material.
 12. The method according toclaim 11, wherein: the region of the first base material on the oppositeside of the region on which the semiconductor device is mounted isprovided apart from the second base material.
 13. The method accordingto claim 11, wherein: the region of the first base material on theopposite side of the region on which the semiconductor device ismounted, is bonded to the second base material by an adhesive materialhaving an elasticity of 3.2 MPa or less.
 14. The method according toclaim 11, wherein: a semiconductor device having a thickness of 0.15 mmor less is used as the semiconductor device.
 15. The method according toclaim 11, wherein: the second connection portion connected to the thirdconnection portion among the respective second connection portions isprovided outside the other second connection portions.
 16. The deviceaccording to claim 11, further comprising: providing a conductive layercomprising at least one layer or a solder ball on the second connectionportion other than the second connection portion connected to the thirdconnection portion among the respective second connection portions. 17.The method according to claim 11, wherein: the semiconductor device isconnected to the first connection portions and mounted on the first basematerial by a flip-chip connection method or a wire-bonding method. 18.The method according to claim 11, wherein: a one-sided wiring substrateprovided the respective first connection portions and the respectivesecond connection portions only on the side of the first base materialon which the semiconductor device is mounted is used as the first basematerial.
 19. The method according to claim 11, wherein: the first basematerial is bonded to the second base material by an adhesive material,which comprising a material from which hardness is obtained so as to becapable of electrically and appropriately connecting the respectivesecond connection portions to the third connection portions by a wirebonding method and holding the first base material apart from the secondbase material, and provided on an edge of the main surface of the firstbase material on a side opposite to the side on which the semiconductordevice is mounted.
 20. The method according to claim 11, furthercomprising: mounting at least one electric component other than thesemiconductor device on the main surface of the second base material ona side opposite to the side on which the first base material is mounted.